GMV1542-GM1
Microchip Technology
Microchip Technology
SI TVAR NON HERMETIC PLASTIC SMT
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GMV1542-GM1 Variable Capacitance Diodes by Microchip Technology represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, GMV1542-GM1 is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 0.75pF @ 30V, 1MHz
- Capacitance Ratio: 3.4
- Capacitance Ratio Condition: C0/C30
- Voltage - Peak Reverse (Max): 30 V
- Diode Type: Single
- Q @ Vr, F: 3800 @ 4V, 50MHz
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
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