GPI65008DF56
GaNPower
GaNPower
GANFET N-CH 650V 8A DFN5X6
$4.00
Available to order
Reference Price (USD)
1+
$4.00000
500+
$3.96
1000+
$3.92
1500+
$3.88
2000+
$3.84
2500+
$3.8
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GPI65008DF56 by GaNPower is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the GPI65008DF56 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Infineon Technologies
BSS214NWH6327XTSA1
STMicroelectronics
STP25N80K5
NXP USA Inc.
PMV16UN,215
Toshiba Semiconductor and Storage
TK8S06K3L(T6L1,NQ)
STMicroelectronics
STD52P3LLH6
Vishay Siliconix
SIS488DN-T1-GE3
Infineon Technologies
IPW60R125CFD7XKSA1
Vishay Siliconix
SI7315DN-T1-GE3
Rohm Semiconductor
RS1L145GNTB
onsemi