IPW60R125CFD7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 18A TO247-3
$7.02
Available to order
Reference Price (USD)
1+
$5.46000
10+
$4.91000
240+
$4.08313
720+
$3.36672
1,200+
$2.88910
Exquisite packaging
Discount
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Upgrade your designs with the IPW60R125CFD7XKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPW60R125CFD7XKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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