GPIHV30SB5L
GaNPower
GaNPower
GANFET N-CH 1200V 30A TO263-5L
$22.00
Available to order
Reference Price (USD)
1+
$22.00000
500+
$21.78
1000+
$21.56
1500+
$21.34
2000+
$21.12
2500+
$20.9
Exquisite packaging
Discount
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Enhance your electronic projects with the GPIHV30SB5L single MOSFET from GaNPower. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust GaNPower's GPIHV30SB5L for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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