GT20N135SRA,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=40A
$3.37
Available to order
Reference Price (USD)
1+
$3.37000
500+
$3.3363
1000+
$3.3026
1500+
$3.2689
2000+
$3.2352
2500+
$3.2015
Exquisite packaging
Discount
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The GT20N135SRA,S1E by Toshiba Semiconductor and Storage is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Toshiba Semiconductor and Storage's reputation for quality, the GT20N135SRA,S1E is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 312 W
- Switching Energy: -, 700µJ (off)
- Input Type: Standard
- Gate Charge: 185 nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 40A, 39Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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