H5N3011P80-E#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$12.62
Available to order
Reference Price (USD)
1+
$12.62000
500+
$12.4938
1000+
$12.3676
1500+
$12.2414
2000+
$12.1152
2500+
$11.989
Exquisite packaging
Discount
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Meet the H5N3011P80-E#T2 by Renesas Electronics America Inc, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The H5N3011P80-E#T2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Renesas Electronics America Inc.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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