HFA3102BZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 6 NPN 12V 10GHZ 14SOIC
$9.08
Available to order
Reference Price (USD)
50+
$5.38120
100+
$4.67250
250+
$4.46252
500+
$4.06876
1,250+
$3.54375
2,500+
$3.50000
Exquisite packaging
Discount
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The HFA3102BZ by Renesas Electronics America Inc is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the HFA3102BZ from Renesas Electronics America Inc, a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: 6 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
- Gain: 12.4dB ~ 17.5dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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