BFP193E6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT143-4
$0.45
Available to order
Reference Price (USD)
3,000+
$0.11920
6,000+
$0.11321
15,000+
$0.10423
30,000+
$0.09824
75,000+
$0.08925
Exquisite packaging
Discount
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Upgrade your RF circuits with the BFP193E6327HTSA1, a high-efficiency Bipolar Junction Transistor (BJT) from Infineon Technologies. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The BFP193E6327HTSA1 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Infineon Technologies for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 12dB ~ 18dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
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