MT3S113TU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 11.2GHZ UFM
$0.27
Available to order
Reference Price (USD)
3,000+
$0.25620
6,000+
$0.24339
15,000+
$0.23333
30,000+
$0.22692
Exquisite packaging
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Introducing the MT3S113TU,LF, a high-performance RF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The MT3S113TU,LF features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Toshiba Semiconductor and Storage for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.3V
- Frequency - Transition: 11.2GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 12.5dB
- Power - Max: 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: UFM
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