NE85630-T1-R24-A
Renesas
Renesas
RF TRANS NPN 12V 4.5GHZ SOT323
$1.80
Available to order
Reference Price (USD)
1+
$1.80000
500+
$1.782
1000+
$1.764
1500+
$1.746
2000+
$1.728
2500+
$1.71
Exquisite packaging
Discount
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The NE85630-T1-R24-A RF Bipolar Junction Transistor (BJT) by Renesas is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NE85630-T1-R24-A is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Renesas for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 9dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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