BFP720FH6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, X BAND, NPN
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
Discount
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Discover the BFP720FH6327, a cutting-edge RF Bipolar Junction Transistor (BJT) from Infineon Technologies, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BFP720FH6327 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Infineon Technologies for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 1dB @ 10GHz
- Gain: 15dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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