2N3799
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$11.43
Available to order
Reference Price (USD)
1+
$11.43000
500+
$11.3157
1000+
$11.2014
1500+
$11.0871
2000+
$10.9728
2500+
$10.8585
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N3799 RF Bipolar Junction Transistor (BJT) by Microchip Technology is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 2N3799 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Microchip Technology for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500µA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
NSVMMBTH81LT1G
Infineon Technologies
BF799
Rochester Electronics, LLC
RZ1214B35YI
Renesas Electronics America Inc
NESG2101M05-T1-A
onsemi
NSVMMBTH81LT3G
Renesas
2SC4901YK-TR-E
NXP Semiconductors
PBR941
Renesas Electronics America Inc
2SC5454-T1-A
Infineon Technologies
BFP 405 H6740
onsemi