NSVMMBTH81LT3G
onsemi
onsemi
SOT-23 PNP TRANSISTOR 20V
$0.10
Available to order
Reference Price (USD)
1+
$0.09991
500+
$0.0989109
1000+
$0.0979118
1500+
$0.0969127
2000+
$0.0959136
2500+
$0.0949145
Exquisite packaging
Discount
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Discover the NSVMMBTH81LT3G, a cutting-edge RF Bipolar Junction Transistor (BJT) from onsemi, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NSVMMBTH81LT3G features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose onsemi for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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