2SC5231C9-TL-E
onsemi
onsemi
2SC5231 - RF SMALL SIGNAL BIPOLA
$0.17
Available to order
Reference Price (USD)
1+
$0.16640
500+
$0.164736
1000+
$0.163072
1500+
$0.161408
2000+
$0.159744
2500+
$0.15808
Exquisite packaging
Discount
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The 2SC5231C9-TL-E RF Bipolar Junction Transistor (BJT) by onsemi is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust onsemi for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
- Gain: 12dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: 3-SMCP
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