NESG2021M16-T3-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF SMALL SIGNAL TRANSISTOR
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
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Discover the NESG2021M16-T3-A, a cutting-edge RF Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NESG2021M16-T3-A features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Renesas Electronics America Inc for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
- Gain: 10dB ~ 18dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: M16, 1208
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