UPA901TU-T3-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF SMALL SIGNAL TRANSISTOR
$0.77
Available to order
Reference Price (USD)
1+
$0.77000
500+
$0.7623
1000+
$0.7546
1500+
$0.7469
2000+
$0.7392
2500+
$0.7315
Exquisite packaging
Discount
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Upgrade your RF circuits with the UPA901TU-T3-A, a high-efficiency Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The UPA901TU-T3-A offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Renesas Electronics America Inc for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 410mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V
- Current - Collector (Ic) (Max): 75mA, 250mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead Exposed Pad
- Supplier Device Package: 8-MINIMOLD
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