NESG2101M05-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
NESG2101 - NPN SIGE RF TRANSISTO
$0.50
Available to order
Reference Price (USD)
1+
$0.50000
500+
$0.495
1000+
$0.49
1500+
$0.485
2000+
$0.48
2500+
$0.475
Exquisite packaging
Discount
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The NESG2101M05-T1-A RF Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust Renesas Electronics America Inc for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 17GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
- Gain: 11dB ~ 19dB
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M05
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