RZ1214B35YI
Rochester Electronics, LLC
Rochester Electronics, LLC
RZ1214B35YI - MICROWAVE POWER TR
$270.40
Available to order
Reference Price (USD)
1+
$270.40000
500+
$267.696
1000+
$264.992
1500+
$262.288
2000+
$259.584
2500+
$256.88
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF circuits with the RZ1214B35YI, a high-efficiency Bipolar Junction Transistor (BJT) from Rochester Electronics, LLC. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The RZ1214B35YI offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Rochester Electronics, LLC for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 3A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-443A
- Supplier Device Package: SOT443A
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