NSVMMBTH81LT1G
onsemi
onsemi
SOT-23 PNP TRANSISTOR 20V
$0.11
Available to order
Reference Price (USD)
1+
$0.11369
500+
$0.1125531
1000+
$0.1114162
1500+
$0.1102793
2000+
$0.1091424
2500+
$0.1080055
Exquisite packaging
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Introducing the NSVMMBTH81LT1G, a high-performance RF Bipolar Junction Transistor (BJT) from onsemi, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The NSVMMBTH81LT1G features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on onsemi for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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