BFU550WF
NXP Semiconductors
NXP Semiconductors
BFU550W - NPN WIDEBAND SILICON R
$0.17
Available to order
Reference Price (USD)
10,000+
$0.13500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BFU550WF, a premium RF Bipolar Junction Transistor (BJT) by NXP Semiconductors, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BFU550WF boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose NXP Semiconductors for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
- Gain: 18dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
Microchip Technology
2N2369
Infineon Technologies
BFR92PE6530HTSA1
Microchip Technology
2N3799
onsemi
NSVMMBTH81LT1G
Infineon Technologies
BF799
Rochester Electronics, LLC
RZ1214B35YI
Renesas Electronics America Inc
NESG2101M05-T1-A
onsemi
NSVMMBTH81LT3G
Renesas
2SC4901YK-TR-E
NXP Semiconductors