MX0912B251Y
Rochester Electronics, LLC
Rochester Electronics, LLC
MX0912B251Y - NPN SILICON RF POW
$249.60
Available to order
Reference Price (USD)
1+
$249.60000
500+
$247.104
1000+
$244.608
1500+
$242.112
2000+
$239.616
2500+
$237.12
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MX0912B251Y by Rochester Electronics, LLC is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Rochester Electronics, LLC for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 690W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 15A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-439A
- Supplier Device Package: CDFM2
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