2SC5455-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
2SC5455 - MD
$0.37
Available to order
Reference Price (USD)
1+
$0.37000
500+
$0.3663
1000+
$0.3626
1500+
$0.3589
2000+
$0.3552
2500+
$0.3515
Exquisite packaging
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The 2SC5455-T1-A from Renesas Electronics America Inc is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the 2SC5455-T1-A is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust Renesas Electronics America Inc for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 10dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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