BFR193L3E6327XTMA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ TSLP-3-1
$0.58
Available to order
Reference Price (USD)
15,000+
$0.11223
30,000+
$0.10294
75,000+
$0.09907
105,000+
$0.09520
Exquisite packaging
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The BFR193L3E6327XTMA1 RF Bipolar Junction Transistor (BJT) by Infineon Technologies is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFR193L3E6327XTMA1 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Infineon Technologies for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 12.5dB ~ 19dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3-1
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