HGTD1N120BNS9A
onsemi
onsemi
IGBT 1200V 5.3A 60W TO252AA
$1.68
Available to order
Reference Price (USD)
2,500+
$0.70122
5,000+
$0.66976
Exquisite packaging
Discount
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The HGTD1N120BNS9A Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The HGTD1N120BNS9A ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate HGTD1N120BNS9A into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 5.3 A
- Current - Collector Pulsed (Icm): 6 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
- Power - Max: 60 W
- Switching Energy: 70µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 14 nC
- Td (on/off) @ 25°C: 15ns/67ns
- Test Condition: 960V, 1A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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