RGTV00TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$6.24
Available to order
Reference Price (USD)
1+
$4.90000
10+
$4.40300
25+
$4.16240
100+
$3.60750
450+
$3.42251
900+
$3.07100
1,350+
$2.59000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the RGTV00TS65GC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RGTV00TS65GC11 delivers consistent and reliable operation. Trust Rohm Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 95 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 276 W
- Switching Energy: 1.17mJ (on), 940µJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 41ns/142ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
STMicroelectronics
STGB7H60DF
Alpha & Omega Semiconductor Inc.
AOT10B65M2
Sanken
SLA5222
IXYS
IXYL40N250CV1
IXYS
IXGH16N170A
IXYS
IXYP20N120C3
Rohm Semiconductor
RGT8NL65DGTL
Alpha & Omega Semiconductor Inc.
AOT15B60D
Infineon Technologies
IGD01N120H2BUMA1
Infineon Technologies