IGD01N120H2BUMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 3.2A 28W TO252-3
$0.59
Available to order
Reference Price (USD)
2,500+
$0.61872
Exquisite packaging
Discount
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Discover the IGD01N120H2BUMA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IGD01N120H2BUMA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IGD01N120H2BUMA1 for unmatched power control.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3.2 A
- Current - Collector Pulsed (Icm): 3.5 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
- Power - Max: 28 W
- Switching Energy: 140µJ
- Input Type: Standard
- Gate Charge: 8.6 nC
- Td (on/off) @ 25°C: 13ns/370ns
- Test Condition: 800V, 1A, 241Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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