IRG4BC20UPBF
Infineon Technologies
Infineon Technologies
IGBT 600V 13A 60W TO220AB
$0.81
Available to order
Reference Price (USD)
1+
$0.81000
500+
$0.8019
1000+
$0.7938
1500+
$0.7857
2000+
$0.7776
2500+
$0.7695
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IRG4BC20UPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRG4BC20UPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRG4BC20UPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 52 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
- Power - Max: 60 W
- Switching Energy: 100µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 27 nC
- Td (on/off) @ 25°C: 21ns/86ns
- Test Condition: 480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
Related Products
Fairchild Semiconductor
FGA50N100BNTTU
Infineon Technologies
IGW30N65L5XKSA1
Fairchild Semiconductor
FGPF50N33BTTU
Fairchild Semiconductor
FGA20S140P
STMicroelectronics
STGB30M65DF2
Infineon Technologies
IGP15N60TXKSA1
onsemi
FGH50N6S2D
IXYS
IXYK140N90C3
onsemi
NGTG15N120FL2WG
Rohm Semiconductor