NGTB35N65FL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 70A TO247
$4.99
Available to order
Reference Price (USD)
1+
$3.12000
30+
$2.64600
120+
$2.29317
510+
$1.95216
1,020+
$1.64640
Exquisite packaging
Discount
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Enhance your electronic projects with the NGTB35N65FL2WG Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the NGTB35N65FL2WG ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose NGTB35N65FL2WG for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 300 W
- Switching Energy: 840µJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 72ns/132ns
- Test Condition: 400V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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