HGTD3N60C3S9A
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
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The HGTD3N60C3S9A by Fairchild Semiconductor is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGTD3N60C3S9A delivers robust performance. Fairchild Semiconductor's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGTD3N60C3S9A into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
- Power - Max: 33 W
- Switching Energy: 85µJ (on), 245µJ (off)
- Input Type: Standard
- Gate Charge: 10.8 nC
- Td (on/off) @ 25°C: -
- Test Condition: 480V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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