RJP60F4DPM-00#T1
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 60A 41.2W TO-3PFM
$5.79
Available to order
Reference Price (USD)
1+
$6.06000
10+
$5.41000
25+
$4.86920
Exquisite packaging
Discount
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Enhance your electronic projects with the RJP60F4DPM-00#T1 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJP60F4DPM-00#T1 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJP60F4DPM-00#T1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
- Power - Max: 41.2 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 45ns/70ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM
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