IXGX100N170
IXYS
IXYS
IGBT 1700V 170A 830W PLUS247
$37.25
Available to order
Reference Price (USD)
30+
$29.45267
Exquisite packaging
Discount
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Upgrade your power management systems with the IXGX100N170 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGX100N170 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGX100N170 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 170 A
- Current - Collector Pulsed (Icm): 600 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
- Power - Max: 830 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 425 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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