IXYH55N120A4
IXYS
IXYS
IGBT GENX4 1200V 55A TO247
$12.50
Available to order
Reference Price (USD)
1+
$12.50000
500+
$12.375
1000+
$12.25
1500+
$12.125
2000+
$12
2500+
$11.875
Exquisite packaging
Discount
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The IXYH55N120A4 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXYH55N120A4 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXYH55N120A4 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 175 A
- Current - Collector Pulsed (Icm): 350 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
- Power - Max: 650 W
- Switching Energy: 2.3mJ (on), 5.3mJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 23ns/300ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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