NGTB50N120FL2WG
onsemi
onsemi
IGBT 1200V 100A 535W TO247
$11.59
Available to order
Reference Price (USD)
1+
$10.15000
30+
$8.79033
120+
$7.67933
510+
$6.73261
1,020+
$5.90940
Exquisite packaging
Discount
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The NGTB50N120FL2WG Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The NGTB50N120FL2WG ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate NGTB50N120FL2WG into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 4.4mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 311 nC
- Td (on/off) @ 25°C: 118ns/282ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 256 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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