HIP2211FBZ-T7A
Renesas Electronics America Inc
Renesas Electronics America Inc
100V/4A HI/LI HALF BRIDGE DRIVER
$2.31
Available to order
Reference Price (USD)
1+
$2.31000
500+
$2.2869
1000+
$2.2638
1500+
$2.2407
2000+
$2.2176
2500+
$2.1945
Exquisite packaging
Discount
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Renesas Electronics America Inc's HIP2211FBZ-T7A represents the cutting edge of PMIC - Gate Driver technology, engineered to deliver unmatched switching performance for power electronics. This IC classification specializes in synchronous rectification and half-bridge configurations with integrated bootstrap diodes. Notable characteristics comprise UVLO protection, programmable turn-on/off thresholds, and 4A peak output current capacity. Primary applications span data center power supplies, welding equipment, and DC-DC converters. A concrete example: the HIP2211FBZ-T7A enables 98% efficiency in 1kW telecom power modules while withstanding 100V/ns common-mode transients. The device's reinforced isolation meets IEC 61800-5-1 standards, particularly valuable for medical imaging systems and railway traction converters.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6V ~ 18V
- Logic Voltage - VIL, VIH: 1.47V, 1.84V
- Current - Peak Output (Source, Sink): 3A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 115 V
- Rise / Fall Time (Typ): 435ns, 365ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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