HIP4083ABZT
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HIGH-SIDE 16SOIC
$3.84
Available to order
Reference Price (USD)
2,500+
$2.66000
Exquisite packaging
Discount
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Renesas Electronics America Inc presents the HIP4083ABZT as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: 3-Phase
- Number of Drivers: 3
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7V ~ 15V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 95 V
- Rise / Fall Time (Typ): 35ns, 30ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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