HIP6602BCB
Intersil
Intersil
HALF BRIDGE BASED MOSFET DRIVER
$1.61
Available to order
Reference Price (USD)
1+
$1.61000
500+
$1.5939
1000+
$1.5778
1500+
$1.5617
2000+
$1.5456
2500+
$1.5295
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Intersil's HIP6602BCB, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The HIP6602BCB demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 15 V
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
Related Products
Analog Devices Inc./Maxim Integrated
MAX5063BASA+
Renesas Electronics America Inc
EL7104CSZ-T13
Texas Instruments
LM5113QDPRRQ1
Microchip Technology
MD1810K6-G
Infineon Technologies
2ED2106S06FXUMA1
Microchip Technology
TC4426AVMF713
Infineon Technologies
PX3519XTMA1
Renesas Electronics America Inc
R2J20657CNP#G2
Texas Instruments
TPS28225D
Infineon Technologies