IRS2117STRPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HIGH-SIDE 8SOIC
$1.23
Available to order
Reference Price (USD)
2,500+
$0.91769
Exquisite packaging
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Optimize your power systems with Infineon Technologies's IRS2117STRPBF, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The IRS2117STRPBF demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 75ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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