HN1B01FU-GR,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP + NPN TR VCEO:-50
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
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Meet the HN1B01FU-GR,LXHF Toshiba Semiconductor and Storage s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the HN1B01FU-GR,LXHF demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 120MHz, 150MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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