HS1GL R3G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
$0.15
Available to order
Reference Price (USD)
1+
$0.14701
500+
$0.1455399
1000+
$0.1440698
1500+
$0.1425997
2000+
$0.1411296
2500+
$0.1396595
Exquisite packaging
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The HS1GL R3G by Taiwan Semiconductor Corporation is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The HS1GL R3G is also used in smart home devices and wearable technology, ensuring seamless operation. Taiwan Semiconductor Corporation's expertise in semiconductor technology guarantees that the HS1GL R3G delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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