HUF75329D3ST
onsemi
onsemi
MOSFET N-CH 55V 20A TO252AA
$1.17
Available to order
Reference Price (USD)
2,500+
$0.62234
5,000+
$0.59294
12,500+
$0.57194
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HUF75329D3ST by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the HUF75329D3ST is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FQP7N80C
onsemi
NVMFS5C456NWFT1G
Vishay Siliconix
IRFR214TRLPBF
Nexperia USA Inc.
2N7002P,215
Harris Corporation
IRFF9232
IXYS
IXFH15N100P
MDD
SI2301-3A
NXP USA Inc.
BUK7628-100A,118
Panjit International Inc.
PJL9401_R2_00001
Sanken