HUF75344P3
Harris Corporation
Harris Corporation
MOSFET N-CH 55V 75A TO220-3
$1.51
Available to order
Reference Price (USD)
1+
$3.16000
10+
$2.85100
100+
$2.29140
800+
$1.60904
1,600+
$1.47665
Exquisite packaging
Discount
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Enhance your electronic projects with the HUF75344P3 single MOSFET from Harris Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Harris Corporation's HUF75344P3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 285W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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