IAUC120N04S6L008ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 120A 8TDSON-33
$3.14
Available to order
Reference Price (USD)
5,000+
$1.29129
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IAUC120N04S6L008ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IAUC120N04S6L008ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
IRFR020TRPBF
Infineon Technologies
IPP029N06NAKSA1
STMicroelectronics
STF10N65K3
Infineon Technologies
ISP650P06NMXTSA1
onsemi
NTMS4916NR2G
Nexperia USA Inc.
BUK9M12-60EX
Microchip Technology
DN3765K4-G
Alpha & Omega Semiconductor Inc.
AOD600A70
onsemi
RFD14N05LSM9A
IXYS