IAUC120N04S6N006ATMA1
Infineon Technologies
Infineon Technologies
IAUC120N04S6N006ATMA1
$4.10
Available to order
Reference Price (USD)
1+
$4.10000
500+
$4.059
1000+
$4.018
1500+
$3.977
2000+
$3.936
2500+
$3.895
Exquisite packaging
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The IAUC120N04S6N006ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IAUC120N04S6N006ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-53
- Package / Case: 8-PowerTDFN
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