IAUS300N08S5N014TATMA1
Infineon Technologies

Infineon Technologies
MOSFET N-CH 80V 300A HDSOP-16-2
$7.72
Available to order
Reference Price (USD)
1+
$7.72000
500+
$7.6428
1000+
$7.5656
1500+
$7.4884
2000+
$7.4112
2500+
$7.334
Exquisite packaging
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Meet the IAUS300N08S5N014TATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IAUS300N08S5N014TATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module