IAUS300N10S5N015TATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 300A HDSOP-16-2
$8.19
Available to order
Reference Price (USD)
1+
$8.19000
500+
$8.1081
1000+
$8.0262
1500+
$7.9443
2000+
$7.8624
2500+
$7.7805
Exquisite packaging
Discount
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Upgrade your designs with the IAUS300N10S5N015TATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IAUS300N10S5N015TATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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