IAUT300N08S5N012ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 300A 8HSOF
$7.35
Available to order
Reference Price (USD)
2,000+
$3.69913
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IAUT300N08S5N012ATMA2 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IAUT300N08S5N012ATMA2 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Alpha & Omega Semiconductor Inc.
AONR34332C
Vishay Siliconix
SIHB30N60AEL-GE3
Infineon Technologies
IPP80N06S207AKSA1
Microchip Technology
APT50M75LFLLG
IXYS
IXFN300N20X3
Texas Instruments
CSD18534Q5AT
Infineon Technologies
IPP65R600C6
Rohm Semiconductor
R8005ANJFRGTL
PN Junction Semiconductor
P3M173K0F3
STMicroelectronics