IFF600B12ME4S8PB11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 600A 20MW ECONO
$397.42
Available to order
Reference Price (USD)
6+
$250.36833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's IFF600B12ME4S8PB11BOSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the IFF600B12ME4S8PB11BOSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONOD-5
Related Products
Microchip Technology
APTGT75X60T3G
Infineon Technologies
FP75R07N2E4BPSA1
Infineon Technologies
FF600R12ME4CPB11BPSA1
Infineon Technologies
F3L200R12N2H3B47BPSA2
IXYS
MWI80-12T6K
Microchip Technology
MSCGLQ50DH120CTBL2NG
Infineon Technologies
FP50R07N2E4B11BPSA1
Infineon Technologies
FZ2400R12HE4B9HDSA2
Microchip Technology
APTGT30X60T3G
Infineon Technologies