IGB01N120H2ATMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 3.2A 28W TO263-3-2
$1.08
Available to order
Reference Price (USD)
1,000+
$0.78576
Exquisite packaging
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The IGB01N120H2ATMA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IGB01N120H2ATMA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3.2 A
- Current - Collector Pulsed (Icm): 3.5 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
- Power - Max: 28 W
- Switching Energy: 140µJ
- Input Type: Standard
- Gate Charge: 8.6 nC
- Td (on/off) @ 25°C: 13ns/370ns
- Test Condition: 800V, 1A, 241Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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