IGW50N60TPXKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
$3.38
Available to order
Reference Price (USD)
1+
$5.10000
10+
$4.61300
240+
$3.83867
720+
$3.31625
1,200+
$2.84790
Exquisite packaging
Discount
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The IGW50N60TPXKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IGW50N60TPXKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IGW50N60TPXKSA1 into your projects for superior results.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 319.2 W
- Switching Energy: 1.53mJ (on), 850µJ (off)
- Input Type: Standard
- Gate Charge: 249 nC
- Td (on/off) @ 25°C: 20ns/215ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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