STGWA25H120F2
STMicroelectronics
STMicroelectronics
IGBT HB 1200V 25A HS TO247-3
$6.32
Available to order
Reference Price (USD)
1+
$8.34000
30+
$7.26167
120+
$6.38292
510+
$5.63425
1,020+
$4.98325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the STGWA25H120F2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGWA25H120F2 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGWA25H120F2 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 600µJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 29ns/130ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
IXYS
IXBX25N250
Infineon Technologies
IRG6B330UDPBF
onsemi
NGTB15N120FL2WG
Infineon Technologies
SGB20N60E3045A
Renesas Electronics America Inc
RJP3065DPP-90#T2F
onsemi
NGP8203N
Infineon Technologies
IKFW75N65ES5XKSA1
Alpha & Omega Semiconductor Inc.
AOK30B135W1
IXYS
IXBT32N300HV
Infineon Technologies